|
Your search returned 34 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
|
Year : 2002 Volume number : 49 Issue: 07 |
Ballistic And Tunneling Gaas Static Induction Transistors: Nano-Devices For Thz Electronics
(Article)
Subject:
Ballistic Transistor
,
Ballistic Transport
,
Gaas Transistor
,
Molecular Layer Epitaxy (Mle)
Author:
J
Nishizawa
P
Ptotka
T
Kurabayashi
page:
1102
-
1111
Calculation Of Gain And Noise With Dead Space For Gaas And A1 Ga1-X As Avalanche Photodiode
(Article)
Subject:
Avalache Multiplication
,
Avalanche Photodiodes
,
Dead-Space Effect
,
Excess Noise Factor
Author:
X.
Li
X
Zheng
S
Wang
F
Ma
page:
1112
-
1117
Nonmelt Laser Annealing Of 5-Ke V And 1-Ke V Boron-Implanted Silicon
(Article)
Subject:
Boron
,
Heavily Doped
,
Laser Annealing
,
Mobility
Author:
S
Earles
M
Law
R
Brindos
K
Jones
page:
1118
-
1123
Cmos Photodiode With Enhanced Responsivity For The Uv/Blue Spectral Range
(Article)
Subject:
Cmos
,
Digital Versatile Disk (Dvd)
,
Digital Video Recording (Dvr)
,
Optoetectronic Integrated Circuits (Oeic)
Author:
A
Ghazi
H
Zimmermann
P
Seegebrecht
page:
1124
-
1128
1.3-Um N-Type Modulation-Doped A1galnas/A1galnas Strain-Compensated Multiple-Quantum-Well Laser Diodes
(Article)
Subject:
Algainas
,
Modulation-Doped Barrier
,
Straincompensated Multiple-Quantum-Well Laser Diodes
Author:
P.-H
Lei
C.-C
Lin
W. J
Ho
M.C.
Wu
page:
1129
-
1135
Integration And Characterization Of Amorphous Silicon Thin-Film Transistor And Mo-Tips For Active-Matrix Cathodes
(Article)
Subject:
Active Matrix Cathodes
,
Amorphous Si Tft
,
Field Emission Display
,
Field Emitter Arrays
Author:
D.-H
Kim
Y. H
Song
Y.-R
Cho
C. S
Hwang
page:
1136
-
1142
A New Driving Waveform To Improve Dark Room Contrast Ratio In Ac Plasma Display Panel
(Article)
Subject:
Ac Plasma Display Panels (Pdp)
,
Dark Room Contrast Ratio
,
Discharge
Author:
C. H
Park
S. H
Lee
D.-H
Kim
J.-H
Ryu
page:
1143
-
1150
Plasma-Charging Effects On Submicron Mos Devices
(Article)
Subject:
Amorphous Silicon
,
Antenna
,
High Dielectric Constant Material
,
Mos
Author:
P.-J
Tzeng
Y.-Y.I
Chang
C. C
Yeh
C. C
Chen
page:
1151
-
1157
Investigation Of Hole-Tunneling Current Through Ultrathin Oxynitride/Oxide Stack Gate Dielectrics In P-Mosfets
(Article)
Subject:
Hole Tunneling Current
,
Mosfet
,
No Stack
,
Scaling Limits
Author:
H. Y
Yu
Y.-T
Hou
M.-F
Li
D.-L
Kwong
page:
1158
-
1164
Recoiled-Oxygen-Free Processing For 1.5 Nm Sion Gate-Dielectric In Sub-100-Nm Cmos Technology
(Article)
Subject:
Cmosfets
,
Dielectric Films
,
Ion Implantation
,
Oxidation
Author:
M
Togo
S
Kimura
T
Mogami
page:
1165
-
1171
Accurate And Computationally Efficient Analytical 1-D Ion Implantation Models Based On Legendre Polynomials
(Article)
Subject:
Analytical Model
,
Ion Implantation
,
Modeling
,
Tcad
Author:
D
Li
G
Shrivastav
G
Wang
Y
Chen
page:
1172
-
1182
A Comparative Study Of Dopant Activation In Boron, Bf2, Arsenic, And Phosphorus Implanted Silicon
(Article)
Subject:
Diffusion Processes
,
Doping
,
Impurities
,
Semiconductor Process Modeling
Author:
A
Mokhberi
P.B
Griffin
J.D
Plummer
E
Paton
page:
1183
-
1191
Suppression Of Stress-Induced Leakage Current After Fowler-Nordheim Stressing By Deuterium Pyrogenic Oxidation And Deuterated Poly-Si Deposition
(Article)
Subject:
Deuterium
,
Gate Oxide
,
Mos Capacitors
,
Oxidation
Author:
Y
Mitani
H
Satake
H
Itoh
A
Toriumi
page:
1192
-
1197
Modeling Of Drain Current Overshoot And Recombination Lifetime Extraction In Floating-Body Submicron Soi Mosfets
(Article)
Subject:
Drain Current Overshoot
,
Floating-Body Effects
,
Recombination Lifetime
,
Silicon-On-Insulator (Soi)
Author:
D
Munteanu
A.-M
Lonescu
page:
1198
-
1205
Mos Varactor Modeling With A Subcircuit Utilizing The Bsim3v3 Model
(Article)
Subject:
Circuit Simulation
,
Mos Capacitors
,
Quality Factor
,
Rf
Author:
K
Molnar
E
Seebacher
Z
Huszka
page:
1206
-
1211
Quantum Simulations Of An Ultrashort Channel Single-Gated N-Mosfet On Soi
(Article)
Subject:
Silicon-On-Insulator (Soi)
,
Single-Gated Mosfet
,
Quantum Mechanical Calculations
,
Ballistic Transport
Author:
J
Knoch
B
Lengeler
J
Appenzeller
page:
1212
-
1218
Series Resistance Calculation For Source/Drain Extension Regions Using 2-D Device Simulation
(Article)
Subject:
Error Analysis
,
Extraction Methods
,
Mos Device Scaling
,
Parameter Estimation
Author:
C.-H
Choi
M. Y
Kwong
R
Kasnavi
P
Griffin
page:
1219
-
1226
Dopant Profile And Gate Geometric Effects On Polysilicon Gate Depletion In Scaled Mos
(Article)
Subject:
Capacitance-Voltage (C-V)
,
Dopant Profile
,
Gate Geometry
,
Polydepletion
Author:
C.-H
Choi
P. R
Chidambaram
R
Khamankar
C. F
Machala
page:
1227
-
1231
Model And Analysis Of Gate Leakage Current In Ultrathin Nitrided Oxide Mosfets
(Article)
Subject:
1/F Noise
,
Gate Leakage Current
,
Inelastic Trap-Assisted Tunneling (Itat)
,
Polysilicon Effect
Author:
J
Lee
G
Bosman
K. R
Green
D
Ladwig
page:
1232
-
1241
A Drift-Diffusion/Monte Carlo Simulation Methodology For Si1-X Hbt Design
(Article)
Subject:
Bipolar
,
Delay Analysis
,
Device Simulation
,
Monte Carlo Simulation
Author:
P
Palestri
M
Mastrapasqua
A
Pacelli
C. A
King
page:
1242
-
1249
Hierarchical 2-D Dd And Hd Noise Simulations Of Si And Sige Devices-Part I: Theory
(Article)
Subject:
Device Simulation
,
Monte Carlo
,
Noise
,
Silicon
Author:
C
Jungemann
B
Neinhus
B
Meinerzhagen
page:
1250
-
1257
Hierarchical 2-D Dd And Hd Noise Simulations Of Si And Sige Devices-Part Ii:Results
(Article)
Subject:
Device Simulation
,
Heterojunction Bipolar Transistor (Hbt)
,
Monte Carlo
,
Noise
Author:
C
Jungemann
B
Neinhus
S
Decker
B
Meinerzhagen
page:
1258
-
1264
An Explicit Expression For Surface Potential At High-End Of Moderate Inversion
(Article)
Subject:
Circuit Model
,
Ioff-Ion Characteristics
,
Moderate Inversion
,
Source Resistance
Author:
N
Shigyo
page:
1265
-
1273
A New Look At The Antenna Effect
(Article)
Subject:
Antenna Ratio (Ar)
,
Electron Shading
,
Process-Induced Damage (Pid)
,
Topography-Dependent Charging (Tdc)
Author:
D. P
Verret
A
Krishnan
S
Krishnan
page:
1274
-
1282
Electron-Electron Interaction Signature Peak In The Substrate Current Versus Gate Voltage Characteristics Of N-Channel Silicon Mosfets
(Article)
Subject:
Electron-Electron Interactions
,
Electron Energy Distribution
,
Electron-Phonon Interactions
,
Hot-Carrier
Author:
K. G
Anil
S
Mahapatra
I
Eisele
page:
1283
-
1288
Soi N-Mosfet Low-Frequency Noise Measurements And Modeling From Room Temperature Up To 250 C
(Article)
Subject:
Body Effects
,
Lorentzian
,
Noise Measurement
,
Noise Model
Author:
V
Dessard
B
Iniguez
S
Adriaensen
D
Flandre
page:
1289
-
1295
Chisel Flash Eeprom-Part I: Performance And Scaling
(Article)
Subject:
Channel Hot Electron (Che)
,
Channel Initiated Secondary Electron (Chisel)
,
Device Scaling
,
Flash Eeprom
Author:
S
Mahapatra
S
Shukuri
J
Bude
page:
1296
-
1301
Chisel Flash Eeprom-Part Ii: Reliability
(Article)
Subject:
Channel Hot Electron (Che)
,
Channel Initiated Secondary Electron (Chisel)
,
Cycling Endurance
,
Data Retention
Author:
S
Mahapatra
S
Shukuri
J
Bude
page:
1302
-
1307
Scaling Of Microwave Noise And Small-Signal Parameters Of Inp/Ingaas Dhbt With High Dc Current Gain
(Article)
Subject:
Double Heterojunction Bipolar Transistor (Hbt)
,
External Base-Collector Capacitor
,
Heterojunction Bipolar Transistor (Hbt)
,
Inp
Author:
Y. Z
Xiong
G.-I
Ng
H
Wang
C. L
Law
page:
1308
-
1311
Estimating Lateral Straggling Of Indium Implanted Into Crystalline Silicon
(Article)
Subject:
Indium
,
Ion Implantation
,
Lateral Straggling
Author:
K
Suzuki
R
Sudo
H
Tashiro
page:
1312
-
1313
An Analytical Model For Flat-Band Polysilicon Quantization In Mos Devices
(Article)
Subject:
Modeling
,
Mos Devices
,
Polysilicon
,
Quantization
Author:
A. S
Spinelli
R
Clerc
G
Ghibaudo
page:
1314
-
1315
A New Low-Loss Lateral Trench Sidewall Schottky (Ltss) Rectifier On Soi With High And Sharp Breakdown Voltage
(Article)
Subject:
Barrier Lowering
,
Breakdown Voltage
,
Lateral Schottky
,
Numerical Simulation
Author:
M.J
Kumar
Y.
Singh
page:
1316
-
1318
Improvement Of Polycrystalline Silicon Thin Film Transistor Using Oxygen Plasma Pretreatment Before Laser Crystallization
(Article)
Subject:
Interface
,
Laser Crystallization
,
Oxygen Plasma
,
Poly-Si Tft
Author:
K. C
Moon
J.-H
Lee
M.-K
Han
page:
1319
-
1321
Equivalent Junction Method To Predict 3-D Effect Of Curved-Abrupt P-N Junctions
(Article)
Subject:
Breakdown Voltage
,
Curvature Of The Lateral Radius
,
Curve Effect
,
Three-Dimensional (3-D) P-N Junction
Author:
J
He
X
Xi
M
Chan
C
Hu
page:
1322
-
1325
|
|
| | |